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Abstract: Chemical-mechanical polishing (CMP) is widely used in
planarization of silicon substrate and multilayer metal interconnection
construction and becomes one of core technologies in ULSI fabrication.
However, the traditional CMP technology has some disadvantages and
limitations. It is important to research and develop new planarization
technology while improving the traditional CMP technology. Based on
analyse of the traditional CMP technology, principle and advantages of
several new wafer planarization technology, such as fixed abrasives CMP,
abrasive-free CMP, electrochemical mechanical planarization, stress-free
polishing, contact planarization, plasma assisted chemical etching, are
introduced，and future developments on wafer planarization technology are
predicted.
Key words: Wafer Chemical-mechanical polishing Planarization IC
CLC No: TN304.1+2
TG175
纪念《机械工程学报》创刊50周年——“机械工程技术的历史、进展与展望”主题征文. 国家自然科学基金资助项目(50390061). Received
20030707, received in revised form 20030812
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