ANALYSIS AND  COMPENSATION OF PROXIMITY EFFECT IN MEMS WITH E-BEAM LITHOGRAPHY

Yin Ming  Zhang Yulin

( School of Control Science and Engineering ,Shandong University, Jinan 250061 )

Cheng Jianhui

( School of Mechanical Engineering ,Shandong University , Jinan 250061 )

 Abstract: E-beam irradiation changes the molecular weight of the resist by inducing chemical changes in the film，which leads to the undesired exposure-area and desired area non-uni- form．This is commonly called as “proximity effect”．The proximity effect in the SDS-3 E-beam lithography system is verified by experiments．All exposures are made with 5～30 kV beam accelerating in Si and PMMA resist．After correction parameter h is of low 30% and giving pictures of experiment．

Key words: Proximity effect  MEMS  Distortion  Optimal state  Correction

CLC No: TH116

国家自然科学基金(90307003)和山东省教育厅自然科学基金(03B53)资助项目. Received 20031013, received in revised form 20040523