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Abstract: The
thermal exchange process in the reactor of the HFCVD system is analyzed at
first. Then, the three dimensions finite element analysis (FEA) model of
large-area substrate temperature field is built up. The three dimensions FEA
model is more close to the actual deposition system compared with the former
pure heat radiation model and its results are in good accord with the
experimental results. The simulation study is carried out on the temperature
distribution of large area HFCVD system based on the three dimensions FEA model.
The three dimensions temperature distribution is obtained by the FEA model. The
effect of the hot filament diameter, hot filament temperature, the
substrate-filament distance and the water cooling parameter on the magnitude and
uniformity of substrate temperature field is discussed. Simulation results show
that in the range of fitting for the growth of diamond film, the hot filament
parameters and contact thermal resistance of the substrate have great influence
on the magnitude of the substrate temperature. Because of the effect three
dimensions thermal conduction of substrate, the temperature field is more
uniform than those in pure heat radiation system and all of the deposition
parameters have little effect on the uniformity of the substrate temperature.
All the results provide the basis for high quality preparation of diamond film.
Key words: Hot filament chemical vapor deposition
Diamond film Temperature distribution
Finite element method Simulation
CLC No: TQ164. 8 O781
国家自然科学基金(50605032)和江苏省自然基金(BK2006189)资助项目. Received 20060716, received in revised form 20070114
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