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  HomeContents of Chinese Journal of Mechanical Engineering (English Edition),1998 No.1ACHIEVING THRESHOLD BARRIER OF 1 nm ROUGHNESS VALUE OF SILICON SURFACE BY DIAMOND TURNING
ACHIEVING THRESHOLD BARRIER OF 1 nm ROUGHNESS VALUE OF SILICON SURFACE BY DIAMOND TURNING

 

Fang Fengzhou  Venkatesh V C

School of Mechanical & Production Engineering
Nanyang Technological University, Singapore

 

Abstract: I nm roughness value of silicon surface by diamond turning is obtained firstly and three novel techniques are proposed. The surface integrity is studied in detail by using atomic force microscope, scanning electron microscope, and stylus surface instrument. The diamond tool sharpness has a considerable influence on the machined surface, therefore a novel technique-brightness modulation for measuring accurately the edge of the cutter is proposed. Mirror surfaces are assessed by another novel technique-a measure of their reflectivity. A third technique, single grit diamond machining is carried out. It supplies an experimental evidence for verifying the obtained high quality turned surfaces.

Key words: Mirror surfaces  Diamond turning  Brittle materials  Single frit machining


Manuscript received on May 28, 1997

 

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