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DU Liqun
LÜ Yan
Key Laboratory for Precision & Non-
traditional Machining Technology of Ministry of Education,
Dalian University of Technology,
Dalian 116023, China
DONG Weijie
School of Electronic and Information
Engineering,
Dalian University of Technology,
Dalian 116023, China
GAO Xiaoguang
Key Laboratory for Micro/Nano
Technology and System,
Dalian University of Technology,
Dalian 116023, China
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FABRICATION OF PIEZOELECTRIC BIMORPH
USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY
HYDROTHERMAL METHOD*
Abstract:
In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate (LZT) film are studied by X-ray diffraction (XRD) and scanning eletron microscope (SEM). The ratio of PbTiO3/PbZrO3 in LZT is 53/47, which is around morphotropic phase boundary (MPB). LZT film is composed of cubic particles with the average size of 5 μm. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.
Key words:
Piezoelectric bimorph Lead zirconate titanate (LZT) film Hydrothermal method |